Jean-Olivier Plouchart, Jonghae Kim, et al.
ESSCIRC 2003
Silicon-Germanium (SiGe) power heterojunction bipolar transistors (HBT's) are fabricated by using two or ten device unit cells with an emitter area of 5 × 0.5 × 16.5 μm 2 each. The large power transistor features 1 W rf output power at 3-dB gain compression, 3.5 V bias, and 2.4 GHz with a maximum power-added-efficiency (PAE) of 48% for Class A/B operation. At a supply voltage of 1.5 V, the transistor delivers a 3-dB rf output power of 150 mW with a PAE of 47%. It is shown that a high collector doping level is advantageous for low-voltage operation. Further, by using special bias sense ports, the interconnect losses are found to degrade the device performance to a considerable degree.
Jean-Olivier Plouchart, Jonghae Kim, et al.
ESSCIRC 2003
Keith A. Jenkins, Karthik Balakrishnan, et al.
IEEE Electron Device Letters
J. Cai, Tak H. Ning, et al.
S3S 2013
Scott K. Springer, Sungjae Lee, et al.
IEEE Transactions on Electron Devices