About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
ESSCIRC 1998
Conference paper
A 5.5-GHz low noise amplifier in SiGe BiCMOS
Abstract
A 5.5-GHz low-noise amplifier (LNA) with switchable gain and temperature and supply-voltage compensation implemented in SiGe BiCMOS is presented. The LNA gain (S21) and 50-Ω noise figure are 14.1 dB and 2.4 dB, respectively, at 25°C. An on-chip proportional-to-absolute temperature (PTAT) current reference reduces the variation in S21and NF 50Ωto 0.35 dB and 0.5 dB, respectively, from 0 to 100°C. The input third-order intermodulation intercept is +1.4 dBm. The circuit consumes 4.7 mA total current from a 2.5-V supply. © 1998 Editions Frontieres.