Publications

This is our catalog of publications authored by IBM researchers, in collaboration with the global research community. It’s an ever-growing body of work that shows why IBM is one of the most important contributors to modern computing.

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11 results for B.D. Parker

DX centers in Sn-doped Al_xGa_1-xAs grown by metalorganic vapor phase epitaxy at T≥850°C
- - P.M. Mooney
  - B.D. Parker
  - et al.
- 1992
- Applied Physics Letters
Metalorganic vapor phase epitaxy and characterization of boron-doped (Al,Ga)As
- - M.A. Tischler
  - P.M. Mooney
  - et al.
- 1992
- Journal of Applied Physics
Properties of DX centers in Al_xGa_1-xAs co-doped with boron and silicon
- - P.M. Mooney
  - M.A. Tischler
  - et al.
- 1991
- Applied Physics Letters
Temperature dependence of carrier density in depleted epitaxial layers deposited on semi-insulating substrates
- - K. Weiser
  - P. Solomon
  - et al.
- 1991
- Journal of Applied Physics
Effect of structural parameters on InGaAs/InAlAs 2DEG transport characteristics
- - M.A. Tischler
  - B.D. Parker
  - et al.
- 1991
- Journal of Electronic Materials
Effect of structural parameters on transport characteristics of GaInAs/AlInAs two-dimensional electron gases grown by molecular beam epitaxy
- - M.A. Tischler
  - B.D. Parker
- 1991
- Applied Physics Letters
Bistability of the DX center in GaAs and Al_xGa_1-xAs, and experimental tests for negative U of the DX level
- - T.N. Theis
  - P.M. Mooney
  - et al.
- 1991
- Journal of Electronic Materials
Two-dimensional hole gas in Si/Si_0.85Ge_0.15/Si modulation-doped double heterostructures
- - P.J. Wang
  - F. Fang
  - et al.
- 1989
- Applied Physics Letters
High hole mobility in Si/Si_1-xGe_x/Si p-type modulation-doped double heterostructures
- - P.J. Wang
  - B.S. Meyerson
  - et al.
- 1989
- Applied Physics Letters
Charge trapping in n-Al_xGa₁-_xAs "insulators" and related device instabilities
- - T.N. Theis
  - B.D. Parker
- 1987
- Applied Surface Science