SiGe heterojunction bipolar transistors
J.M.C. Stork, G.L. Patton, et al.
VLSI Technology 1989
High quality Si/Si1-xGex/Si p-type modulation-doped double heterostructures with x=0.12 and 0.15 have been grown by the ultrahigh vacuum/chemical vapor deposition technique. Hole mobilities as high as ∼3700 cm2/V s at 14 K have been obtained for heterostructures with x=0.12, at a sheet carrier concentration of ∼8×1011 cm -2. This is the highest hole mobility ever reported for p-type Si material at these carrier concentrations. The electrical properties of these heterostructures at low temperatures are those expected of a two-dimensional hole gas at Si/SiGe and SiGe/Si heterointerfaces. The high hole mobility is indicative of excellent interfacial properties. Peak mobilities were observed to depend on the level and proximity of remote B dopant species, as well as the Ge content of the alloyed layers.
J.M.C. Stork, G.L. Patton, et al.
VLSI Technology 1989
E.F. Crabbé, D.L. Harame, et al.
IEEE T-ED
E.E. Mitchell, R.G. Clark, et al.
Physica B: Condensed Matter
A. Grill, V.V. Patel, et al.
JES