Lateral Encroachment of Extrinsic-Base Dopant in Submicrometer Bipolar Transistors
- Pong-Fei Lu
- G.P. Li
- et al.
- 1987
- IEEE Electron Device Letters
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33 results for G.P. Li
Bipolar Transistor with Self-Aligned Lateral Profile
- G.P. Li
- Tze-Chiang Chen
- et al.
- 1987
- IEEE Electron Device Letters
Effect of Off-Axis Implant on the Characteristics of Advanced Self-Aligned Bipolar Transistors
- Ching-Te Chuang
- G.P. Li
- et al.
- 1987
- IEEE Electron Device Letters
Design Considerations of High-Performance Narrow-Emitter Bipolar Transistors
- Denny D. Tang
- Tze-Chiang Chen
- et al.
- 1987
- IEEE Electron Device Letters
Sub-400-ps ISL circuits
- Ching-Te Chuang
- G.P. Li
- et al.
- 1986
- IEEE Electron Device Letters
On the investigation of 1/F noise of polysilicon emitter P-N-P transistors in a C-BiCMOS technology
- J. Zhao
- G.P. Li
- et al.
- 1993
- VLSI-TSA 1993
Submicron high performance bipolar technology
- T.C. Chen
- J.D. Cressler
- et al.
- 1989
- VLSI Technology 1989
PICOSECOND ELECTRICAL PULSES FOR VLSI ELECTRONICS CHARACTERIZATION.
- J.-M. Halbout
- P.G. May
- et al.
- 1986
- TMPEO 1986
INCREASING THE CURRENT DRIVING CAPABILITY OF EPITAXIAL SCHOTTKY BARRIER DIODES USING HIGH-ENERGY IMPLANTATION.
- C.T. Chuang
- G.P. Li
- et al.
- 1984
- ECS Meeting 1984
EFFECTS OF MeV IMPLANTATION ON THE CHARACTERISTICS OF p-n JUNCTIONS.
- L.K. Wang
- G.P. Li
- et al.
- 1984
- ECS Meeting 1984