Effect of indium on the properties of DX centers in Si-doped In y(Ga0.3Al0.7)1-yAs
- L.S. Pann
- M.A. Tischler
- et al.
- 1990
- Journal of Applied Physics
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49 results for M.A. Tischler
Selectively Regrown Contacts to Field-Effect Transistors with Two-Dimensional Electron-Gas Channels
- A. Palevski
- Paul M. Solomon
- et al.
- 1990
- IEEE Electron Device Letters
Selective epitaxy of MOVPE GaAs using diethyl gallium chloride
- T.F. Kuech
- M.A. Tischler
- et al.
- 1990
- Journal of Crystal Growth
Electrical characterization of GaAs/Al0.30Ga0.70 As p+-n heterojunctions grown by metalorganic vapor phase epitaxy
- M.A. Tischler
- H. Baratte
- et al.
- 1989
- Journal of Applied Physics
Electrical characteristics of regrown interfaces using diethylgallium chloride-based metalorganic vapor phase epitaxy
- M.A. Tischler
- T.F. Kuech
- et al.
- 1989
- Applied Physics Letters
Selective epitaxy in the conventional metalorganic vapor phase epitaxy of GaAs
- T.F. Kuech
- M.A. Tischler
- et al.
- 1989
- Applied Physics Letters
Low resistance ohmic contacts to two-dimensional electron-gas structures by selective MOVPE
- P. Solomon
- A. Palevski
- et al.
- 1989
- IEDM 1989
Doping and dopant behavior in (Al,Ga)As grown by metalorganic vapor phase epitaxy
- T.F. Kuech
- M.A. Tischler
- et al.
- 1989
- Journal of Crystal Growth
Vertical fiber coupling for high-density optical interconnection
- R.W. Ade
- E.R. Fossum
- et al.
- 1989
- Proceedings of SPIE 1989
VIB-4 Performance of Vertically Coupled Backside Fiber-Optic Interconnects to GaAs
- Robert W. Ade
- Eric R. Fossum
- et al.
- 1989
- IEEE T-ED