Electrical characteristics of regrown interfaces using diethylgallium chloride-based metalorganic vapor phase epitaxy

Abstract

The electrical characteristics of regrown interfaces deposited using an alternate metalorganic chemistry, diethylgallium chloride (DEGaCl), are investigated. With the appropriate HCl pre-regrowth surface treatment, these interfaces are found to be of very high quality with no substantial interface charge. The contact resistivity, as determined by transmission line measurements, is (2-4)×10-7 Ω cm2 at both 77 and 300 K. Secondary-ion mass spectroscopy measurements show no detectable accumulation of impurities at the regrown interface, in contrast to those regrown using the conventional trimethylgallium-based chemistry.