About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
IEDM 1989
Conference paper
Low resistance ohmic contacts to two-dimensional electron-gas structures by selective MOVPE
Abstract
Selective metalorganic vapor-phase epitaxy (MOVPE) has been used to make very-low-resistance edge contacts to thin n+ GaAs layers and to two-dimensional electron gas (2DEG) structures. Contact resistance for contacts to the n+ layer are <1 × 10-8 Ω-cm2, close to its fundamental limit. Computer simulations of the 2DEG structure reveal the influence of traps at the regrown GaAs-AlGaAs interface which deplete the corner region of carriers. This corner region is influenced by the slope of the sidewall. Low-resistance contacts to the 2DEG structures were achieved both through the use of a postgrowth anneal and through the use of vertical sidewalls.