U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Selective epitaxy is the laterally controlled growth of epitaxial material on a substrate. We have demonstrated the highly selective epitaxial growth of GaAs using diethyl gallium chloride or (C2H5)2GaCl. No GaAs growth is observed on the masking material over a wide range of growth temperatures, 600 ≤T ≤800°C. The edges of the selectively grown GaAs are bounded by the slow growth planes typical of the inorganic based growth techniques. By appropriate pre-growth treatment the electrical properties of the interface between the selectively grown material and the underlying substrate can be made to be very good with no interfacial potential barrier. © 1990.
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
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Small