X-ray lithography induced radiation effects in deep submicron CMOS devices
- L.K. Wang
- A. Acovic
- et al.
- 1993
- MRS Spring Meeting 1993
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20 results for W.H. Chang
Characteristics of CMOS devices fabricated using high quality thin PECVD gate oxide
- L.K. Wang
- D.S. Wen
- et al.
- 1989
- IEDM 1989
CHARACTERIZATION AND MODELING OF A LATCHUP-FREE 1- mu M CMOS TECHNOLOGY.
- Y. Taur
- W.H. Chang
- et al.
- 1983
- IEDM 1983
Transient Switching of the Parasitic Bipolar Device of an Epitaxial CMOS Transistor
- Wen-Hsing Chang
- M.D. Rodriguez
- 1987
- IEEE Electron Device Letters
Understanding of enhanced sensitivity to Hot Carrier degradation in drain engineered n-FETs
- C.C.-H. Hsu
- B.S. Wu
- et al.
- 1992
- SSDM 1992
Characteristics of vertical p-channel MOSFETs for high density circuit application
- D.S. Wen
- W.H. Chang
- et al.
- 1991
- VLSI-TSA 1991
Correction to “Analytical IC Metal-Line Capacitance Formulas
- W.H. Chang
- 1977
- IEEE T-MTT
The inductance of a superconducting strip transmission line
- W.H. Chang
- 2008
- Journal of Applied Physics
Loop inductance of a Josephson junction interferometer
- W.H. Chang
- 2008
- Journal of Applied Physics
A High-Performance 0.25-μm CMOS Technology: II—Technology
- Bijan Davari
- Wen-Hsing Chang
- et al.
- 1992
- IEEE T-ED