Conference paper
Designing stable circuits in the world of instability
Rajiv V. Joshi, Rouwaida Kanj
EDSSC 2015
This paper describes modeling and hardware results of how the soft-error rate (SER) of a 65-nm silicon-on-insulator SRAM memory cell changes over time, as semiconductor aging effects shift the SRAM cell behavior. This paper also describes how the SER changes in the presence of systematic and random manufacturing variation. © 2008 IEEE.
Rajiv V. Joshi, Rouwaida Kanj
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