Publication
Applied Physics Letters
Paper

Study of oxygen addition to CF3Br reactive ion etching plasmas: Effects on silicon surface chemistry and etching behavior

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Abstract

The etching of silicon in CF3Br/O2 plasmas has been examined. In situ x-ray photoelectron spectroscopy shows that silicon surfaces etched in CF3Br/O2 plasmas with a proportion of 30% O 2 or less are covered with a reaction layer that is mainly due to bromine bonded to silicon. As the proportion of oxygen is increased above 30% the reaction layer becomes thicker and contains mainly fluorine and oxygen, and the silicon etch rate decreases simultaneously.

Date

01 Dec 1989

Publication

Applied Physics Letters

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