A. Krol, C.J. Sher, et al.
Surface Science
Recent selective oxide etching results obtained with an electron cyclotron resonance high-density plasma reactor are presented. Reactive ion etching lag results of patterned SiG2 samples etched with various fluorocarbon gases are discussed. A reactive ion etching lag mechanism which is based on the dependence of the oxide etch rate on if power is proposed. © 1994, American Vacuum Society. All rights reserved.
A. Krol, C.J. Sher, et al.
Surface Science
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
J.C. Marinace
JES