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Publication
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Conference paper
Reactive ion etching lag investigation of oxide etching in fluorocarbon electron cyclotron resonance plasmas
Abstract
Recent selective oxide etching results obtained with an electron cyclotron resonance high-density plasma reactor are presented. Reactive ion etching lag results of patterned SiG2 samples etched with various fluorocarbon gases are discussed. A reactive ion etching lag mechanism which is based on the dependence of the oxide etch rate on if power is proposed. © 1994, American Vacuum Society. All rights reserved.