O.C. Wells, E. Munro, et al.
Institute of Physics Electron Microscopy and Analysis Group Conference 1991
The low-loss electron (LLE) image in the scanning electron microscope (SEM) is applied to samples that are right angles to the beam with a view to applications in the semiconductor metrology, inspection and review areas. Image is obtained by collecting electrons from a specimen in the forward direction with 100 to 500 eV energy loss.