O.C. Wells, T.E. Everhart, et al.
IEEE T-ED
Paper
Studies of samples having shallow surface topography by the low-loss electron (LLE) method in the scanning electron microscope (SEM)
Abstract
The low-loss electron (LLE) image in the scanning electron microscope (SEM) is applied to samples that are right angles to the beam with a view to applications in the semiconductor metrology, inspection and review areas. Image is obtained by collecting electrons from a specimen in the forward direction with 100 to 500 eV energy loss.
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