Ellen J. Yoffa, David Adler
Physical Review B
Leakage currents introduced in the low-field, direct-tunneling regime of thin silicon dioxide layers after high-field stress are related to defects produced by hot electron transport in the oxide layer. From these studies, it is concluded that the "generation" of neutral electron traps in thin oxides are the dominant cause of this phenomenon. © 1995.
Ellen J. Yoffa, David Adler
Physical Review B
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009
Peter J. Price
Surface Science
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP