R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
Leakage currents introduced in the low-field, direct-tunneling regime of thin silicon dioxide layers after high-field stress are related to defects produced by hot electron transport in the oxide layer. From these studies, it is concluded that the "generation" of neutral electron traps in thin oxides are the dominant cause of this phenomenon. © 1995.
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
Frank Stem
C R C Critical Reviews in Solid State Sciences
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
T.N. Morgan
Semiconductor Science and Technology