M.V. Fischetti, S.E. Laux
ESSDERC 1996
To circumvent its present practical limits—mainly gate leakage and poor performance—‘MOSFET scaling’ has taken a different meaning: Not simply shrinking the device, but changing its nature. Here it is suggested that long-range Coulomb interactions constitute a possible fundamental cause of the poor performance of sub-50 nm devices. Alternative device-designs and materials are briefly discussed from a transport-physics perpsective: High-κ insulators, transport in thin Si body (SOI and double-gate), along different crystal directions and on different materials. The major role played by the interfaces (surface plasmons and phonons, roughness, confinement) emerges as one of the most important common elements.
M.V. Fischetti, S.E. Laux
ESSDERC 1996
D.J. Frank, S.E. Laux, et al.
IEDM 1992
M.V. Fischetti
Physical Review B - CMMP
C. Sheraw, M. Yang, et al.
VLSI Technology 2005