The physics of hot-electron degradation of Si MOSFET's: Can we understand it?

Abstract

We discuss some of the difficulties we must overcome to analyze the "hot-electron problem" in Si MOSFET's from a first-principle point of view. Using our Monte Carlo-Poisson device simulator DAMOCLES, we find that many physical elements are very important in determining the gate current in short-channel devices. Examples are given for effects whose importance was expected (band-structure and short-range carrier-carrier interaction), and for some whose importance was underestimated (such as the long-range plasma effects at the channel-drain region). Fortunately, recent results show that only electrons reaching the SiO2-gate interface with energy in excess of about 2 to 3 eV can damage the oxide. We discuss the important technological consequences of this finding. © 1989.