A 32nm 0.5V-supply dual-read 6T SRAM
Jente B. Kuang, J. Schaub, et al.
CICC 2010
This paper presents a new circuit technique to alleviate the uncontrollable floating-body-induced hysteretic component present in the transfer characteristics of voltage-mode CMOS Schmitt trigger circuits in a partially depleted silicon-on-insulator technology. This technique integrates a successive switching threshold shift mechanism with the systematic body contact scheme, resulting in improved noise immunity and well-defined hysteresis behavior for the Schmitt trigger circuit that is suitable for use as a low-noise receiver, level shifter, waveform-reshaping circuit, and delay element in very large-scale integrated applications. © 2004, The Institute of Electrical and Electronics Engineers, Inc. All rights reserved.
Jente B. Kuang, J. Schaub, et al.
CICC 2010
Pong-Fei Lu, Hyun J. Shin, et al.
VLSI-TSA 1993
Jente B. Kuang, David H. Allen, et al.
IEEE Journal of Solid-State Circuits
Aditya Bansal, Jae-Joon Kim, et al.
IEEE Transactions on Electron Devices