Photon Emission Microscopy of Amorphous HfO2 ReRAM Cells

Abstract

In this paper, we study the photon emission from filaments formed in amorphous HfO2 Resistive Random-Access Memory (ReRAM) cells and compare it to previous results from crystalline cells. Both a CCD and an InGaAs camera are used to observe the photon emission in set/reset state using forward/reverse bias voltage. An electric field model and a uniform Poisson spatial distribution model can be used to model the photon emission on both types of cell types.