Saibal Mukhopadhyay, Rahul M. Rao, et al.
IEEE Transactions on VLSI Systems
In this letter, the random dopant fluctuation effect in ultrathin-body (UTB) fully depleted/silicon-on-insulator (FD/SOI) devices is analyzed. We show that due to larger variability and asymmetry in threshold voltage Vt distribution, it will be difficult to use UTB FD/ SOI devices for sub-50-nm static random access memory (SRAM) design. Using thinner buried oxide (BOX) FD/SOI devices, the asymmetry in the Vt spread can be reduced. We present a viable concept of FD/ SOI SRAM and predict that a thin-BOX device is the optimal FD/SOI structure for SRAM in sub-50-nm technology nodes. © 2006 IEEE.
Saibal Mukhopadhyay, Rahul M. Rao, et al.
IEEE Transactions on VLSI Systems
Niladri Narayan Mojumder, Saibal Mukhopadhyay, et al.
IEEE Transactions on VLSI Systems
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IRPS 2015
Shu-Jen Han, Xinlin Wang, et al.
IEDM 2008