Publication
Microelectronics Journal
Paper

Assessment of structure variation in silicon nanowire FETs and impact on SRAM

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Abstract

Impact of device structure variability of silicon nanowire FETs is assessed and SRAM design implication is presented based on 3-D numerical simulation. Both the conventional and junctionless nanowire FETs are shown to be sensitive to structural variation whereas the former is more tolerable. Both the circular wire and non-circular wire cases for feasible SRAM design with a focus on read/write noise margin are included in our study. © 2011 Elsevier Ltd. All rights reserved.

Date

01 May 2012

Publication

Microelectronics Journal

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