G.S. Oehriein, G.M.W. Kroesen, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
It is shown that in situ HeNe laser ellipsometric measurements performed during and after rf plasma exposure of a Si wafer with or without oxide can be used to obtain the wafer temperature during plasma exposure. The method utilizes either the temperature coefficient δn/δT of the refractive index of Si or the linear thermal expansion coefficient δl/lδT of SiO 2. The values of these parameters have been redetermined in this work.