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Publication
Journal of Applied Physics
Paper
Nonintrusive wafer temperature measurement using in situ ellipsometry
Abstract
It is shown that in situ HeNe laser ellipsometric measurements performed during and after rf plasma exposure of a Si wafer with or without oxide can be used to obtain the wafer temperature during plasma exposure. The method utilizes either the temperature coefficient δn/δT of the refractive index of Si or the linear thermal expansion coefficient δl/lδT of SiO 2. The values of these parameters have been redetermined in this work.