A.D. Marwick, G.J. Clark, et al.
Nuclear Inst. and Methods in Physics Research, B
Gallium-implanted p+ layers in Si were exposed to atomic hydrogen from a plasma. It was found that very large hydrogen concentrations, up to 7.5 times larger than the peak Ga concentration of 7×10 19/cm3, segregated into the p+ layer during treatment at 200°C. The shape of the hydrogen concentration profile was similar to that of the Ga profile. Ion channeling showed that the H atoms did not occupy simple high-symmetry sites in the lattice, and electron microscopy revealed the presence of extended {111} stacking fault defects associated with the layer of high hydrogen concentration. A mechanism to account for these findings is suggested.
A.D. Marwick, G.J. Clark, et al.
Nuclear Inst. and Methods in Physics Research, B
M. Wittmer, P. Fahey, et al.
Physical Review Letters
J. Simko, G.S. Oehrlein, et al.
JES
J. Freeouf, N. Braslau, et al.
Applied Physics Letters