Victor Chan, M. Bergendahl, et al.
ASMC 2020
Formation of heavy C andlor P doping Si alloy with a strain andlor low resistivity in FinFET SID having only (I10) plane on fin sidewall poses a challenge because, if the CYD selective epitaxy typically used in recent SID process integration is employed, it is extremely difficult to grow heavily doped Si alloys with defect-free microstructure on (11O) crystallographic plane. We propose the combination of cryogenic ion-implant amorphization followed by nonmelt laser annealing regrowth for both strained C-incorporated Si solid-phase epitaxy and improvement of P-activation in heavily P-doped Si alloy epitaxially grown film, while annihilating defects. In this paper, the diffusion and the activation of C atoms and P atoms in Si with C additive are investigated for different nonmelt laser annealing conditions. Additionally, the influence of cryogenic implantation of Si+ into amorphized P-doped Si epitaxial layer followed by nonmelt laser annealing recystallization on the diffusion and activation of P atoms in Si is discussed.
Victor Chan, M. Bergendahl, et al.
ASMC 2020
Victor Chan, Kangguo Cheng, et al.
IEEE Trans Semicond Manuf
Ruturaj Pujari, Arthur Gasasira, et al.
ASMC 2021
Shravan Matham, C. Durfee, et al.
ASMC 2019