Low phase noise 5 GHz VCOs in 0.13 μm SOI and bulk CMOS

Abstract

This paper presents 5 GHz LC VCO designs fabricated in 0.13 μm SOI and bulk CMOS process technolgies. Technology advantages, considerations, and trade-offs are compared for high performance VCO design. A methodology for designing a low FOM VCO is given. The SOI VCO achieves a phase noise of -131 dBc/Hz at a 1 MHz offset and consumes 6 mW. The bulk VCO has a phase noise of -132 dBc/Hz at a 1 MHz offset and draws 6.2 mW. Both of these VCOs achieve a FOM value of nearly -200 dBc/Hz. © 2006 IEEE.