LINFET: A BSIM class FET model with smooth derivatives at Vds=0

Abstract

We propose and demonstrate a method of linearizing the IV and CV BSIM equations to eliminate the discontinuities in the higher order derivatives in the IV and CV models at Vds=0V. The result is a reasonably accurate prediction of distortion in common-gate circuits. We denote our solution LINFET. Except for a minor parameter recentering, LINFET can be used with existing parameter sets that have been extracted using the industrial standard BSIM models. We also show how the discontinuities arise in the current BSIM equation set.