E. Burstein
Ferroelectrics
We propose a new mechanism for the positive impact of millisecond laser anneal on junction leakage and suicide contact resistance. Dopant redistribution in the suicide and the ensuing reduction of the effective barrier height play a major role which we demonstrate on 32nm SOI test vehicles.
E. Burstein
Ferroelectrics
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
Ronald Troutman
Synthetic Metals