John G. Long, Peter C. Searson, et al.
JES
In chemically amplified resists, relief image formation strongly depends on the chemistry occurring during the post-exposure bake step. By combining experimental measurements and kinetics simulations, we propose a reaction mechanism describing both acid-catalyzed and uncatalyzed thermolysis routes leading to changes in polymer solubility. The temperature-dependent kinetic parameters derived here provide guidance in CA resist process and materials design. © 1995 Elsevier Science B.V. All rights reserved.
John G. Long, Peter C. Searson, et al.
JES
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Sung Ho Kim, Oun-Ho Park, et al.
Small
T.N. Morgan
Semiconductor Science and Technology