William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
In chemically amplified resists, relief image formation strongly depends on the chemistry occurring during the post-exposure bake step. By combining experimental measurements and kinetics simulations, we propose a reaction mechanism describing both acid-catalyzed and uncatalyzed thermolysis routes leading to changes in polymer solubility. The temperature-dependent kinetic parameters derived here provide guidance in CA resist process and materials design. © 1995 Elsevier Science B.V. All rights reserved.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
T. Schneider, E. Stoll
Physical Review B