Conference paper
Passive and active silicon nanophotonic circuits
Y. Vlasov, E. Dulkeith, et al.
FiO 2005
Measurements of the contact potential difference between different materials have been performed for the first time using scanning force microscopy. The instrument has a high resolution for both the contact potential difference (better than 0.1 mV) and the lateral dimension (<50 nm) and allows the simultaneous imaging of topography and contact potential difference. Images of gold, platinum, and palladium surfaces, taken in air, show a large contrast in the contact potential difference and demonstrate the basic concept.
Y. Vlasov, E. Dulkeith, et al.
FiO 2005
P.C.D. Hobbs, H.K. Wickramasinghe
Proceedings of SPIE 1989
David W. Abraham, C.C. Williams, et al.
Applied Physics Letters
Philip C. D. Hobbs, David W. Abraham, et al.
Applied Physics Letters