L. Clevenger, C. Cabral Jr., et al.
MRS Fall Meeting 1995
We have investigated the structure of Sb and Al implanted NiSi/SiO 2 interfaces. The addition of dopants has been previously found to alter operating thresholds of silicide-gated field effect transistors. We find that Sb is segregated to an interfacial site, and is in a metallic bonding configuration. In contrast, interfacial Al is in an oxidized state. The two additives would appear to alter the threshold voltages by distinctly different mechanisms. © 2005 American Institute of Physics.
L. Clevenger, C. Cabral Jr., et al.
MRS Fall Meeting 1995
P.L. Grande, A. Hentz, et al.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
M. Horn-Von Hoegen, J. Falta, et al.
Applied Physics Letters
M. Copel, M.C. Reuter, et al.
Physical Review B