M. Copel, M.C. Reuter, et al.
Applied Physics Letters
Paper
Interfacial segregation of dopants in fully silicided metal-oxide- semiconductor gates
Abstract
We have investigated the structure of Sb and Al implanted NiSi/SiO 2 interfaces. The addition of dopants has been previously found to alter operating thresholds of silicide-gated field effect transistors. We find that Sb is segregated to an interfacial site, and is in a metallic bonding configuration. In contrast, interfacial Al is in an oxidized state. The two additives would appear to alter the threshold voltages by distinctly different mechanisms. © 2005 American Institute of Physics.
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