V. Narayanan, V.K. Paruchuri, et al.
Microelectronic Engineering
We have investigated the structure of Sb and Al implanted NiSi/SiO 2 interfaces. The addition of dopants has been previously found to alter operating thresholds of silicide-gated field effect transistors. We find that Sb is segregated to an interfacial site, and is in a metallic bonding configuration. In contrast, interfacial Al is in an oxidized state. The two additives would appear to alter the threshold voltages by distinctly different mechanisms. © 2005 American Institute of Physics.
V. Narayanan, V.K. Paruchuri, et al.
Microelectronic Engineering
M. Copel, M.C. Reuter, et al.
Physical Review Letters
C. D'Emic, J.S. Newbury, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
R.P. Pezzi, R.M. Wallace, et al.
International Conference on Characterization and Metrology for ULSI Technology 2005