About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions
Abstract
The substitution of the SiO2 gate oxide in MOS devices by a material with a high-k dielectric constant is being deeply studied nowadays to solve the problem of the leakage currents that appear with the progressive scaling of SiO2 thickness. To improve the quality of the high-k/Si interface a very thin SiO2 film is grown between both materials. In this work, HfO2/SiO2 stacks with different SiO2 thickness were subjected to different types of stress (static and dynamic) to analyze the effect of this interfacial layer of SiO2 in the degradation of the stack. The results show that the dielectric degradation depends on the stress applied and that the thickness of the SiO2 interfacial layer influences the advanced stages of the stack degradation. © 2007.