Worn-out oxide MOSFET characteristics: Role of gate current and device parameters on a current mirror
- J. Martín-Martínez
- R. Rodríguez
- et al.
- 2007
- Microelectronics Reliability
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Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions
- E. Amat
- R. Rodríguez
- et al.
- 2007
- Microelectronics Reliability