Michiel Sprik
Journal of Physics Condensed Matter
We report a study of MOS capacitors having a dielectric of HfO2 and an interlayer of Si deposited in-situ, by MBE on GaAs surfaces prepared with various surface-reconstructions. Interface state densities of about 1 × 1012 eV-1cm-2 have been obtained. Capacitors on the Ga-rich surface, measured with peripheral illumination, show signs of a possible inversion layer. © 2007 Elsevier B.V. All rights reserved.
Michiel Sprik
Journal of Physics Condensed Matter
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000