A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
We report a study of MOS capacitors having a dielectric of HfO2 and an interlayer of Si deposited in-situ, by MBE on GaAs surfaces prepared with various surface-reconstructions. Interface state densities of about 1 × 1012 eV-1cm-2 have been obtained. Capacitors on the Ga-rich surface, measured with peripheral illumination, show signs of a possible inversion layer. © 2007 Elsevier B.V. All rights reserved.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
J.A. Barker, D. Henderson, et al.
Molecular Physics
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Imran Nasim, Melanie Weber
SCML 2024