Impact of Hot Carrier Stress on RF FOMs in 10-nm Bulk N-Channel FinFETs

Abstract

We report on the effect of hot-carrier stress on RF performance of 10nm bulk n-channel FinFETs using experimental evidence. The universality of hot-carrier degradation (HCD), which has so far been reported only for DC parameters, is successfully observed in RF figures-of-merit (FOMs) as well. The strict correlation between the degradation in DC and RF FOMs is ascribed to the presence of same damage causing mechanism that is, interface state generation. Methodology and outcomes from this work could benefit in projecting the impact of HCD on RF FOMs.