About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
IEEE T-ED
Paper
Compact Model of a Bulk FinFET Quantum Dot Toward Single Chip Integration of Qubits and Control Electronics for Quantum Computing Applications
Abstract
In this work, we thoroughly investigate the drain current oscillations induced by quantum confinement in short channel bulk FinFETs, while operating in coulomb blockade (CB) regime at cryogenic temperature. Various device geometries and layouts of narrow fin-based FinFETs are analyzed experimentally to comprehend the development of quantum dots (QDs). The results demonstrate that the size of QD in the channel is crucial in defining the sensitivity of confinement-related parameters to modifications in device design. To capture the gate and drain bias dependence associated with drain current oscillations in CB regime, we have proposed analytical equations to augment the existing BSIM-CMG compact model. Model-hardware correlation is also presented for n- and p-type bulk FinFETs with different device geometries. The proposed model marks the initial steps toward developing a unified compact model that accurately captures both: the classical behavior of bulk FinFETs and its QD-based tunneling behavior at cryogenic temperatures.