High-capacity, self-assembled metal-oxide-semiconductor decoupling capacitors

Abstract

We combine nanometer-scale polymer self assembly with advanced semiconductor microfabrication to produce metaloxide-semiconductor (MOS) capacitors with accumulation capacitance more than 400% higher than planar devices of the same lateral area. The self assembly technique achieves this degree of enhancement using only standard processing techniques, thereby obviating additional process complexity. These devices are suitable for use as on-chip power supply decoupling capacitors, particularly in high-performance silicon-on-insulator technology. © 2004 IEEE.