Half-V_DD Bit-Line Sensing Scheme in CMOS DRAM's

Abstract

A sensing scheme in which the bit line is precharged to half VDD is introduced for CMOS DRAM’s. The study shows that the half - VDDbit-line sensing scheme has several unique advantages, especially for highperformance high-density CMOS DRAM’s, when compared to the full- VDDbit-line sensing scheme used for NMOS memory arrays or the grounded bit-line sensing scheme for PMOS arrays in CMOS DRAM’s. © 1984, IEEE.