Publication
Journal of Non-Crystalline Solids
Paper

Homogeneous chemical vapor deposition of amorphous semiconductor thin films

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Abstract

In this paper we discuss the properties of amorphous hydrogenated silicon and germanium films prepared by homogeneous chemical vapor deposition. Emphasis is placed upon the important differences between HOMOCVD and plasma-deposited films. Experiments and calculations are presented which illustrate the most important reactor dynamical parameters. © 1983.

Date

01 Jan 1983

Publication

Journal of Non-Crystalline Solids

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