Sandip Tiwari, Steven L. Wright, et al.
IEEE T-ED
We present a figure summarizing the variation of conduction band discontinuity, valence band discontinuity, and gold Schottky barrier height for binary and ternary III-V semiconductors. This figure, which applies to unstrained material, makes use of the property of transitivity in band alignments, and the observed experimental correlation between barrier heights and band gap discontinuities, to consolidate a wide range of data. The figure should be very useful in the design of novel heterostructure electronic and optical devices.
Sandip Tiwari, Steven L. Wright, et al.
IEEE T-ED
Sandip Tiwari, Paul M. Solomon, et al.
Microelectronic Engineering
M. Yamaoka, Hiroshi Miki, et al.
IEDM 2011
Sani Nassif, Kerry Bernstein, et al.
IEDM 2007