Madhu Padmanabha Sumangala, Ahish Shylendra, et al.
IEEE Electron Device Letters
We present a figure summarizing the variation of conduction band discontinuity, valence band discontinuity, and gold Schottky barrier height for binary and ternary III-V semiconductors. This figure, which applies to unstrained material, makes use of the property of transitivity in band alignments, and the observed experimental correlation between barrier heights and band gap discontinuities, to consolidate a wide range of data. The figure should be very useful in the design of novel heterostructure electronic and optical devices.
Madhu Padmanabha Sumangala, Ahish Shylendra, et al.
IEEE Electron Device Letters
David J. Frank
IEDM 2002
Sandip Tiwari, Steven L. Wright, et al.
IEEE Electron Device Letters
Sandip Tiwari, Jeffrey Hintzman, et al.
Applied Physics Letters