Publication
IEDM 2011
Conference paper

Evaluation methodology for random telegraph noise effects in SRAM arrays

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Abstract

We propose a novel method to evaluate the impact of RTN on SRAM, and have demonstrated and proved the RTN effects are indeed present in SRAM by both simulation and experiments. Our results also determine the necessary voltage guard band to prevent SRAM yield loss. © 2011 IEEE.

Date

01 Dec 2011

Publication

IEDM 2011