Electrical characterisation of InGaAs on insulator structures
The electrical properties of Au/Ni/In<inf>0.53</inf>Ga<inf>0.47</inf>As/Al<inf>2</inf>O<inf>3</inf>/SiO<inf>2</inf>/Si structures were investigated using capacitance voltage (C-V) analysis. The properties of the InGaAs on insulator structures were analysed by comparing the measured and the theoretical C-Vs obtained using a physics based simulation of this structure. The results show that the measured data obtained on both n-type and p-type silicon match very well the simulated data. This work also shows that this approach allows the characterisation of charges in the buried oxide as well as interface states at the bottom InGaAs/Al<inf>2</inf>O<inf>3</inf> interface.