Publication
EUROSOI-ULIS 2015
Conference paper

Tri-gate In0.53Ga0.47As-on-insulator junctionless field effect transistors

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Abstract

A tri-gate In0.53Ga0.47As-on-insulator (InGaAs-OI) junctionless field-effect transistor (JLFET) architecture is demonstrated. The devices feature a 20-nm-thick n-In0.53Ga0.47As channel doped to 1018 /cm3 obtained by direct wafer bonding and a 3.5-nm-thick A12O3 gate dielectric deposited by plasma-enhanced atomic layer deposition (PE-ALD). The impact of the fin width (Wfin) and gate length (Lg) scaling at fixed channel doping (Nd) and equivalent oxide thickness (EOT) on the device performance is discussed and benchmarked.

Date

18 Mar 2015

Publication

EUROSOI-ULIS 2015

Authors

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