Publication
Journal of Applied Physics
Paper

Effects of deuterium plasmas on silicon near-surface properties

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Abstract

The effects of reactive-ion etching and plasma etching (using deuterium) on the electrical properties of silicon have been studied employing capacitance-voltage measurements of Schottky diodes and secondary ion mass spectrometry. Both significant hydrogen penetration, which causes electrical deactivation of the boron dopant, and radiation damage result from the plasma exposure. A model is suggested to explain our results.

Date

01 Dec 1989

Publication

Journal of Applied Physics

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