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Publication
Journal of Applied Physics
Paper
Effects of deuterium plasmas on silicon near-surface properties
Abstract
The effects of reactive-ion etching and plasma etching (using deuterium) on the electrical properties of silicon have been studied employing capacitance-voltage measurements of Schottky diodes and secondary ion mass spectrometry. Both significant hydrogen penetration, which causes electrical deactivation of the boron dopant, and radiation damage result from the plasma exposure. A model is suggested to explain our results.