G.S. Oehrlein, R.M. Tromp, et al.
JES
The effects of reactive-ion etching and plasma etching (using deuterium) on the electrical properties of silicon have been studied employing capacitance-voltage measurements of Schottky diodes and secondary ion mass spectrometry. Both significant hydrogen penetration, which causes electrical deactivation of the boron dopant, and radiation damage result from the plasma exposure. A model is suggested to explain our results.
G.S. Oehrlein, R.M. Tromp, et al.
JES
N.R. Taskar, I.B. Bhat, et al.
Journal of Crystal Growth
R.M. Feenstra, G.S. Oehrlein
Applied Physics Letters
G.S. Oehrlein, C.M. Ransom, et al.
Applied Physics Letters