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Publication
Surface and Interface Analysis
Paper
Study of near‐surface disorder and surface residues after reactive Ion etching of Silicon
Abstract
Helium ion channelling, nuclear reaction profiling and x‐ray photoemission measurements of CF4/X%H2 (0≤X≤40) and CCIF3/50%H2 dry etched Si surfaces are reported. It is shown that plasma exposure of a clean Si surface leads to the deposition of a thin (∼30∼50) Å thick C,F‐containing film (or C,F, C1‐containing in the case of CC1F3/H2 etching). A subsurface Si carbide layer is formed during reactive ion etching. The near‐surface region (∼30∼50 Å) of the Si substrate is heavily disordered as found by ion channeling. A modified, less damaged layer containing a high concentration of hydrogen is formed in the case of the H2 containing gases (as shown by nuclear reaction profillin) and extends more than 250 Å from the surface. It is found that heating the plasma exposed substrates to 400°C in dry O2 for 30 min is efficient in recovering good quality Si surfaces. Copyright © 1986 John Wiley & Sons Ltd.