ENHANCED DIFFUSION IN SHORT TIME ANNEALED ARSENIC AND BORON ION IMPLANTED SILICON.

Abstract

In VLSI, the scaling down of device dimensions requires the formation of ever shallower junctions. Recent studies using Short Time Annealing (STA) of ion implanted Si for junction formation reveals that the diffusion that takes place in a standard furnace anneal of 900-1000 degree C for 10-30 minutes can be largely avoided. STA can be carried out with a variety of large area incoherent radiation heating sources and is applied for 1-10 sec at 1000-1200 degree C. This article discusses enhanced diffusion results in relation to the temperature measurements. Also described is a specially attached thermocouple to a silicon wafer that greatly enhances reproducible and reliable temperature measurements.