Comment on "unified compact theory of tunneling gate current in metal-oxide-semiconductor structures: Quantum and image force barrier lowering" [Journal of Applied Physics 92, 3724 (2002)]

A compact model is proposed to evaluate the tunneling current across the insulator of metal-oxide-semiconductor structures. The model is based on a questionable approximation for the 'transparency factor'. It was shown that the argument brought forward to explain the negligible effect of the image-induced barrier-lowering ignores simple concepts of electrostatics.