M. Hargrove, S.W. Crowder, et al.
IEDM 1998
We have observed an electric-field-induced change in the dimensionality of excitons in superlattices, from three to quasi-two dimensions. The exciton binding energy of a (40 AIS)/(40 AIS) GaAs/(GaAl)As superlattice, determined from low-temperature photocurrent experiments, increases more than 6 meV by the action of an electric field perpendicular to the superlattice layers. This sharp increase, from nearly the bulk value of GaAs at very low fields to the isolated-quantum-well value at high fields, is a direct consequence of the Stark localization of electrons and holes in superlattices. © 1990 The American Physical Society.
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
P.C. Pattnaik, D.M. Newns
Physical Review B
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics