About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
Applied Physics Letters
Paper
Block-by-block deposition: A new growth method for complex oxide thin films
Abstract
An alternative growth method for high-Tc oxide thin films employing molecular beam deposition is proposed. Instead of an uncontrolled local nucleation followed by lateral growth and island coalescence, the new method provides substrate coverage by nonreacting constituents before nucleation is initiated, a controlled reaction path, and reduced lateral growth. DyBa 2Cu3O6+δ films without precipitates, with a surface roughness of ±1 unit cell and showing finite size oscillations in the x-ray diffraction spectrum, have been prepared. This method reveals that diffusion dominates the growth process at high substrate temperatures (≅700°C).