About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
IITC 2002
Conference paper
Bimodal electromigration mechanisms in dual-damascene Cu line/via on W
Abstract
Electromigration in 0.23 μm wide Cu dual-damascene lines connected to W underlayers has been investigated. Void growth at the vicinity of the cathode end of the line/via was determined to be the cause of the line failure. The distribution of failure lifetimes was found to be closely represented by a two-log-normal function. Focused ion beam analysis showed that the two failure populations had distinct difference in the location of the void growth.