Band structure and direct transition electroluminescence in the In _1-xGa_xP alloys

Abstract

The position of the (1, 0, 0) minima in InP are determined from measurements in the region of interconduction band absorption. Direct transition electroluminescence in the In1-xGaxP alloys is observed over a range of alloys up to x = 0.8 and photon energies of up to 2.2 eV at 300°K and is consistent with the bandstructure determined for InP and that of GaP. © 1969 The American Institute of Physics.