Publication
Applied Physics Letters
Paper

Band structure and direct transition electroluminescence in the In 1-xGaxP alloys

View publication

Abstract

The position of the (1, 0, 0) minima in InP are determined from measurements in the region of interconduction band absorption. Direct transition electroluminescence in the In1-xGaxP alloys is observed over a range of alloys up to x = 0.8 and photon energies of up to 2.2 eV at 300°K and is consistent with the bandstructure determined for InP and that of GaP. © 1969 The American Institute of Physics.

Date

17 Oct 2003

Publication

Applied Physics Letters

Authors

Share